 |  | | |
| PartNumber | IRF6646TRPBF | IRF6646TRPBF. | IRF6646TRPBF-CUT TAPE |
| Description | MOSFET 80V 1 N-CH HEXFET 9.5mOhms 36nC | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DirectFET-MN | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 80 V | - | - |
| Id Continuous Drain Current | 12 A | - | - |
| Rds On Drain Source Resistance | 7.6 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 36 nC | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 89 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | DirectFET | - | - |
| Packaging | Reel | - | - |
| Height | 0.7 mm | - | - |
| Length | 6.35 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.05 mm | - | - |
| Brand | Infineon / IR | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 20 ns | - | - |
| Factory Pack Quantity | 4800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 31 ns | - | - |
| Typical Turn On Delay Time | 17 ns | - | - |
| Part # Aliases | SP001564784 | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon / IR |
IRF6646TRPBF | MOSFET 80V 1 N-CH HEXFET 9.5mOhms 36nC | |
| IRF6646TRPBF. | New and Original | ||
| IRF6646TRPBF-CUT TAPE | New and Original | ||
Infineon Technologies |
IRF6646TRPBF | MOSFET 80V 1 N-CH HEXFET 9.5mOhms 36nC |