PartNumber | IRFR3710ZTRLPBF | IRFR3710ZTRPBF | IRFR3711ZPBF |
Description | MOSFET 100V 1 N-CH HEXFET 18mOhms 69nC | MOSFET MOSFT 100V 56A 18mOhm 69nC Qg | MOSFET 20V 1 N-CH HEXFET 6.5mOhms 29nC |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | 20 V |
Id Continuous Drain Current | 3.1 A | 56 A | 93 A |
Rds On Drain Source Resistance | 18 mOhms | 18 mOhms | 5.7 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | 4 V | 2.45 V |
Vgs Gate Source Voltage | 20 V | - | 20 V |
Qg Gate Charge | 69 nC | 100 nC | 18 nC |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 140 W | 140 W | 79 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Packaging | Reel | Reel | Tube |
Height | 2.3 mm | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm | 6.5 mm |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm | 6.22 mm |
Brand | Infineon / IR | Infineon / IR | Infineon / IR |
Forward Transconductance Min | 39 S | 39 S | 48 S |
Fall Time | 42 ns | 42 ns | 5.2 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 43 ns | 43 ns | 13 ns |
Factory Pack Quantity | 3000 | 2000 | 75 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 53 ns | - | 15 ns |
Typical Turn On Delay Time | 14 ns | - | 12 ns |
Part # Aliases | SP001567664 | SP001560638 | SP001564900 |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Type | - | - | HEXFET Power MOSFET |