IRFR48ZTR

IRFR48ZTRLPBF vs IRFR48ZTRPBF

 
PartNumberIRFR48ZTRLPBFIRFR48ZTRPBF
DescriptionMOSFET 55V 1 N-CH HEXFET 11mOhms 40nCMOSFET MOSFT 55V 62A 11mOhm 40nC Qg
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage55 V55 V
Id Continuous Drain Current62 A62 A
Rds On Drain Source Resistance11 mOhms11 mOhms
Vgs th Gate Source Threshold Voltage4 V4 V
Vgs Gate Source Voltage20 V-
Qg Gate Charge40 nC60 nC
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation91 W91 W
ConfigurationSingleSingle
Channel ModeEnhancement-
PackagingReelReel
Height2.3 mm2.3 mm
Length6.5 mm6.5 mm
Transistor Type1 N-Channel1 N-Channel
Width6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon / IR
Forward Transconductance Min120 S120 S
Fall Time35 ns35 ns
Product TypeMOSFETMOSFET
Rise Time61 ns61 ns
Factory Pack Quantity30002000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time40 ns-
Typical Turn On Delay Time15 ns-
Part # AliasesSP001575902SP001575894
Unit Weight0.139332 oz0.139332 oz
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRFR48ZTRLPBF MOSFET 55V 1 N-CH HEXFET 11mOhms 40nC
IRFR48ZTRPBF Darlington Transistors MOSFET MOSFT 55V 62A 11mOhm 40nC Qg
IRFR48ZTRLPBF RF Bipolar Transistors MOSFET 55V 1 N-CH HEXFET 11mOhms 40nC
Infineon / IR
Infineon / IR
IRFR48ZTRPBF MOSFET MOSFT 55V 62A 11mOhm 40nC Qg
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