IRFR6215TRPBF

IRFR6215TRPBF vs IRFR6215TRPBF-CUT TAPE vs IRFR6215TRPBF,FR6215,IRF

 
PartNumberIRFR6215TRPBFIRFR6215TRPBF-CUT TAPEIRFR6215TRPBF,FR6215,IRF
DescriptionMOSFET 1 P-CH -150V HEXFET 580mOhms 44nC
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage150 V--
Id Continuous Drain Current13 A--
Rds On Drain Source Resistance580 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge66 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation110 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 P-Channel--
TypePreliminary--
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min3.6 S--
Fall Time37 ns--
Product TypeMOSFET--
Rise Time36 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time53 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesSP001571562--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRFR6215TRPBF MOSFET 1 P-CH -150V HEXFET 580mOhms 44nC
IRFR6215TRPBF MOSFET P-CH 150V 13A DPAK
IRFR6215TRPBF-CUT TAPE New and Original
IRFR6215TRPBF,FR6215,IRF New and Original
IRFR6215TRPBF. Transistor Polarity:P Channel, Continuous Drain Current Id:-13A, Drain Source Voltage Vds:-150V, On Resistance Rds(on):0.295ohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-4V, Power D
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