IRG4BH20K-

IRG4BH20K-LPBF vs IRG4BH20K-L vs IRG4BH20K-S

 
PartNumberIRG4BH20K-LPBFIRG4BH20K-LIRG4BH20K-S
DescriptionIGBT Transistors 1200V UltraFast 4-20kHzIGBT 1200V 11A 60W TO262IGBT 1200V 11A 60W D2PAK
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Product CategoryIGBTs - SingleIGBTs - SingleIGBTs - Single
Series---
PackagingTubeTubeTube
Unit Weight0.073511 oz--
Mounting StyleThrough Hole--
Package CaseTO-262-3 Long Leads, I2Pak, TO-262AATO-262-3 Long Leads, I2Pak, TO-262AATO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input TypeStandardStandardStandard
Mounting TypeThrough HoleThrough HoleSurface Mount
Supplier Device PackageTO-262TO-262D2PAK
ConfigurationSingle--
Power Max60W60W60W
Reverse Recovery Time trr---
Current Collector Ic Max11A11A11A
Voltage Collector Emitter Breakdown Max1200V1200V1200V
IGBT Type---
Current Collector Pulsed Icm22A22A22A
Vce on Max Vge Ic4.3V @ 15V, 5A4.3V @ 15V, 5A4.3V @ 15V, 5A
Switching Energy450μJ (on), 440μJ (off)450μJ (on), 440μJ (off)450μJ (on), 440μJ (off)
Gate Charge28nC28nC28nC
Td on off 25°C23ns/93ns23ns/93ns23ns/93ns
Test Condition960V, 5A, 50 Ohm, 15V960V, 5A, 50 Ohm, 15V960V, 5A, 50 Ohm, 15V
Pd Power Dissipation60 W--
Minimum Operating Temperature- 55 C--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage3.17 V--
Continuous Collector Current at 25 C11 A--
Maximum Gate Emitter Voltage+/- 20 V--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRG4BH20K-STRLP IGBT Modules 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT
IRG4BH20K-STRLP IGBT Modules 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT
IRG4BH20K-LPBF IGBT Transistors 1200V UltraFast 4-20kHz
IRG4BH20K-SPBF IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT
IRG4BH20K-L IGBT 1200V 11A 60W TO262
IRG4BH20K-S IGBT 1200V 11A 60W D2PAK
Infineon / IR
Infineon / IR
IRG4BH20K-SPBF IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT
IRG4BH20KLPBF New and Original
IRG4BH20KSPBF IGBT, 1200V, D2-PAK
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