| PartNumber | IXFN170N65X2 | IXFN170N30P | IXFN180N07 |
| Description | MOSFET 650V/170A miniBLOC SOT-227 | MOSFET 138 Amps 300V 0.018 Rds | MOSFET 180 Amps 70V 0.007 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Package / Case | SOT-227-4 | SOT-227-4 | SOT-227-4 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 300 V | 70 V |
| Id Continuous Drain Current | 170 A | 138 A | 180 A |
| Rds On Drain Source Resistance | 13 mOhms | 18 mOhms | 6 mOhms |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 4.5 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
| Qg Gate Charge | 434 nC | 258 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1.17 kW | 890 W | 520 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | HiPerFET | - |
| Packaging | Tube | Tube | Tube |
| Series | 650V Ultra Junction X2 | IXFN170N30 | IXFN180N07 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 55 S | 57 S | 80 S |
| Fall Time | 6 ns | 16 ns | 60 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 15 ns | 29 ns | 60 ns |
| Factory Pack Quantity | 10 | 10 | 10 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 133 ns | 79 ns | 100 ns |
| Typical Turn On Delay Time | 60 ns | 41 ns | 30 ns |
| Height | - | 12.22 mm | 9.6 mm |
| Length | - | 38.23 mm | 38.2 mm |
| Type | - | Polar Power MOSFET HiPerFET | - |
| Width | - | 25.42 mm | 25.07 mm |
| Unit Weight | - | 1.058219 oz | 1.058219 oz |