| PartNumber | IXFP180N10T2 | IXFP18N60X | IXFP18N65X2 |
| Description | MOSFET TRENCHT2 HIPERFET PWR MOSFET 100V 180A | MOSFET DISCMSFT NCH ULTRJNCT XCLASS | MOSFET 650V/18A TO-220 |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 600 V | 650 V |
| Id Continuous Drain Current | 180 A | 18 A | 18 A |
| Rds On Drain Source Resistance | 6 mOhms | 230 mOhms | 200 mOhms |
| Tradename | HiPerFET | HiPerFET | HiPerFET |
| Packaging | Tube | - | Tube |
| Series | IXFP180N10 | - | 650V Ultra Junction X2 |
| Brand | IXYS | IXYS | IXYS |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.081130 oz | - | - |
| Number of Channels | - | 1 Channel | 1 Channel |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | 3 V |
| Vgs Gate Source Voltage | - | 30 V | 10 V |
| Qg Gate Charge | - | 35 nC | 29 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 320 W | 290 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Fall Time | - | 24 ns | 26 ns |
| Rise Time | - | 30 ns | 30 ns |
| Typical Turn Off Delay Time | - | 63 ns | 50 ns |
| Typical Turn On Delay Time | - | 20 ns | 20 ns |
| Forward Transconductance Min | - | - | 8 S |