PartNumber | IXXN110N65C4H1 | IXXN200N60B3 | IXXN200N60B3H1 |
Description | IGBT Modules 650V/234A Trench IGBT GenX4 XPT | IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT | IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | IGBT Modules | IGBT Transistors | IGBT Transistors |
RoHS | Y | - | - |
Product | IGBT Silicon Modules | - | - |
Configuration | Single Dual Emitter | - | - |
Collector Emitter Voltage VCEO Max | 650 V | - | - |
Collector Emitter Saturation Voltage | 1.98 V | - | - |
Continuous Collector Current at 25 C | 210 A | - | - |
Gate Emitter Leakage Current | 100 nA | - | - |
Pd Power Dissipation | 750 W | - | - |
Package / Case | SOT-227B-4 | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Packaging | Tube | Tube | Tube |
Series | IXXN110N65 | IXXN200N60 | IXXN200N60 |
Brand | IXYS | IXYS | IXYS |
Mounting Style | SMD/SMT | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Product Type | IGBT Modules | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 10 | 10 | 10 |
Subcategory | IGBTs | IGBTs | IGBTs |
Tradename | XPT | XPT | XPT |
Unit Weight | 1.058219 oz | - | - |
Technology | - | Si | Si |