PartNumber | MRF6V2150NBR1 | MRF6V2150NB | MRF6V2150NBR |
Description | RF MOSFET Transistors VHV6 150W | ||
Manufacturer | NXP | - | FSL |
Product Category | RF MOSFET Transistors | - | Module |
RoHS | E | - | - |
Transistor Polarity | N-Channel | - | N-Channel |
Technology | Si | - | Si |
Vds Drain Source Breakdown Voltage | 110 V | - | - |
Gain | 25 dB | - | 25 dB |
Output Power | 150 W | - | 150 W |
Minimum Operating Temperature | - 65 C | - | - 65 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TO-272-4 | - | - |
Packaging | Reel | - | Reel |
Configuration | Single Dual Drain Dual Gate | - | - |
Height | 2.64 mm | - | - |
Length | 23.67 mm | - | - |
Operating Frequency | 220 MHz | - | 220 MHz |
Series | MRF6V2150N | - | MRF6V2150N |
Type | RF Power MOSFET | - | RF Power MOSFET |
Width | 9.07 mm | - | - |
Brand | NXP / Freescale | - | - |
Channel Mode | Enhancement | - | - |
Moisture Sensitive | Yes | - | - |
Product Type | RF MOSFET Transistors | - | - |
Factory Pack Quantity | 500 | - | - |
Subcategory | MOSFETs | - | - |
Vgs Gate Source Voltage | - 0.5 V, 12 V | - | - |
Vgs th Gate Source Threshold Voltage | 1.62 V | - | - |
Part # Aliases | 935316841528 | - | - |
Unit Weight | 0.067412 oz | - | 0.067412 oz |
Package Case | - | - | TO-272 WB EP |
Vgs Gate Source Voltage | - | - | - 0.5 V 12 V |
Vds Drain Source Breakdown Voltage | - | - | 110 V |
Vgs th Gate Source Threshold Voltage | - | - | 1.62 V |