PartNumber | MRFE6S9060NR1 | MRFE6S9060N | MRFE6S9060NR |
Description | RF MOSFET Transistors HV6E 60W TO270-2N FET | ||
Manufacturer | NXP | - | - |
Product Category | RF MOSFET Transistors | - | - |
RoHS | E | - | - |
Transistor Polarity | N-Channel | - | - |
Technology | Si | - | - |
Vds Drain Source Breakdown Voltage | 66 V | - | - |
Gain | 21.1 dB | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-270 | - | - |
Packaging | Reel | - | - |
Configuration | Single | - | - |
Height | 2.08 mm | - | - |
Length | 9.7 mm | - | - |
Operating Frequency | 1 GHz | - | - |
Series | MRFE6S9060NR1 | - | - |
Width | 6.15 mm | - | - |
Brand | NXP / Freescale | - | - |
Channel Mode | Enhancement | - | - |
Moisture Sensitive | Yes | - | - |
Product Type | RF MOSFET Transistors | - | - |
Factory Pack Quantity | 500 | - | - |
Subcategory | MOSFETs | - | - |
Vgs Gate Source Voltage | - 0.5 V, 12 V | - | - |
Vgs th Gate Source Threshold Voltage | 2.2 V | - | - |
Part # Aliases | 935309637528 | - | - |
Unit Weight | 0.018679 oz | - | - |