PartNumber | MRFE6S9125NBR1 | MRFE6S9125NB |
Description | RF MOSFET Transistors HV6E 125W | |
Manufacturer | NXP | - |
Product Category | RF MOSFET Transistors | - |
RoHS | E | - |
Transistor Polarity | N-Channel | - |
Technology | Si | - |
Vds Drain Source Breakdown Voltage | - 500 mV, 66 V | - |
Gain | 20.2 dB | - |
Output Power | 27 W | - |
Minimum Operating Temperature | - 65 C | - |
Maximum Operating Temperature | + 150 C | - |
Mounting Style | SMD/SMT | - |
Package / Case | TO-272-4 | - |
Packaging | Reel | - |
Configuration | Single | - |
Height | 2.64 mm | - |
Length | 23.67 mm | - |
Operating Frequency | 880 MHz | - |
Series | MRFE6S9125N | - |
Width | 9.07 mm | - |
Brand | NXP / Freescale | - |
Number of Channels | 1 Channel | - |
Channel Mode | Enhancement | - |
Moisture Sensitive | Yes | - |
Product Type | RF MOSFET Transistors | - |
Factory Pack Quantity | 500 | - |
Subcategory | MOSFETs | - |
Vgs Gate Source Voltage | - 0.5 V, 12 V | - |
Vgs th Gate Source Threshold Voltage | 2.1 V | - |
Part # Aliases | 935309651528 | - |
Unit Weight | 0.067412 oz | - |