 |  | |
| PartNumber | MRFX1K80HR5 | MRFX1K80HR6 |
| Description | RF MOSFET Transistors 65V LDMOS Transistor | |
| Manufacturer | NXP | - |
| Product Category | RF MOSFET Transistors | - |
| RoHS | Y | - |
| Transistor Polarity | Dual N-Channel | - |
| Technology | Si | - |
| Id Continuous Drain Current | 43 A | - |
| Vds Drain Source Breakdown Voltage | - 500 mV, 179 V | - |
| Gain | 25.1 dB | - |
| Output Power | 1.8 kW | - |
| Minimum Operating Temperature | - 40 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | NI-1230H-4 | - |
| Packaging | Reel | - |
| Operating Frequency | 1.8 MHz to 400 MHz | - |
| Series | MRFX1K80 | - |
| Type | RF Power MOSFET | - |
| Brand | NXP Semiconductors | - |
| Forward Transconductance Min | 44.7 S | - |
| Number of Channels | 2 Channel | - |
| Pd Power Dissipation | 2247 W | - |
| Product Type | RF MOSFET Transistors | - |
| Factory Pack Quantity | 50 | - |
| Subcategory | MOSFETs | - |
| Vgs Gate Source Voltage | - 6 V, 10 V | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | - |
| Part # Aliases | 935351859178 | - |
| Unit Weight | 0.464156 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
NXP Semiconductors |
MRFX1K80HR5 | RF MOSFET Transistors 65V LDMOS Transistor | |
| MRFX1K80HR5 | RF MOSFET LDMOS 65V NI-1230H-4S | ||
| MRFX1K80HR6 | New and Original |