MRFX600

MRFX600HR5 vs MRFX600HSR5 vs MRFX600GSR5

 
PartNumberMRFX600HR5MRFX600HSR5MRFX600GSR5
DescriptionRF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 VRF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 VRF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V
ManufacturerNXPNXPNXP
Product CategoryRF MOSFET TransistorsRF MOSFET TransistorsRF MOSFET Transistors
RoHSYYY
Transistor PolarityN-ChannelN-ChannelN-Channel
TechnologySiSiSi
Id Continuous Drain Current32 A32 A32 A
Vds Drain Source Breakdown Voltage193 V193 V193 V
Gain26.4 dB26.4 dB26.4 dB
Output Power600 W600 W600 W
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Mounting StyleScrew MountSMD/SMTSMD/SMT
Package / CaseNI-780H-4LNI-780S-4LNI-780GS-4L
PackagingReelReelReel
Operating Frequency1.8 MHz to 400 MHz1.8 MHz to 400 MHz1.8 MHz to 400 MHz
SeriesMRFX600MRFX600MRFX600
TypeRF Power MOSFETRF Power MOSFETRF Power MOSFET
BrandNXP SemiconductorsNXP SemiconductorsNXP Semiconductors
Number of Channels2 Channel2 Channel2 Channel
Pd Power Dissipation1.333 kW1.333 kW1.333 kW
Product TypeRF MOSFET TransistorsRF MOSFET TransistorsRF MOSFET Transistors
Factory Pack Quantity505050
SubcategoryMOSFETsMOSFETsMOSFETs
Vgs Gate Source Voltage- 6 V, 10 V- 6 V, 10 V- 6 V, 10 V
Vgs th Gate Source Threshold Voltage2.1 V2.1 V2.1 V
Part # Aliases935376369178935376371178935376368178
Manufacturer Part # Description RFQ
NXP Semiconductors
NXP Semiconductors
MRFX600HR5 RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V
MRFX600HSR5 RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V
MRFX600GSR5 RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V
MRFX600GSR5 TRANS LDMOS 600W 400 MHZ 65V
MRFX600HR5 TRANS LDMOS 600W 400 MHZ 65V
MRFX600HSR5 TRANS LDMOS 600W 400 MHZ 65V
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