MRFX600H

MRFX600HR5 vs MRFX600HSR5

 
PartNumberMRFX600HR5MRFX600HSR5
DescriptionRF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 VRF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V
ManufacturerNXPNXP
Product CategoryRF MOSFET TransistorsRF MOSFET Transistors
RoHSYY
Transistor PolarityN-ChannelN-Channel
TechnologySiSi
Id Continuous Drain Current32 A32 A
Vds Drain Source Breakdown Voltage193 V193 V
Gain26.4 dB26.4 dB
Output Power600 W600 W
Minimum Operating Temperature- 40 C- 40 C
Maximum Operating Temperature+ 150 C+ 150 C
Mounting StyleScrew MountSMD/SMT
Package / CaseNI-780H-4LNI-780S-4L
PackagingReelReel
Operating Frequency1.8 MHz to 400 MHz1.8 MHz to 400 MHz
SeriesMRFX600MRFX600
TypeRF Power MOSFETRF Power MOSFET
BrandNXP SemiconductorsNXP Semiconductors
Number of Channels2 Channel2 Channel
Pd Power Dissipation1.333 kW1.333 kW
Product TypeRF MOSFET TransistorsRF MOSFET Transistors
Factory Pack Quantity5050
SubcategoryMOSFETsMOSFETs
Vgs Gate Source Voltage- 6 V, 10 V- 6 V, 10 V
Vgs th Gate Source Threshold Voltage2.1 V2.1 V
Part # Aliases935376369178935376371178
Manufacturer Part # Description RFQ
NXP Semiconductors
NXP Semiconductors
MRFX600HR5 RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V
MRFX600HSR5 RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V
MRFX600HR5 TRANS LDMOS 600W 400 MHZ 65V
MRFX600HSR5 TRANS LDMOS 600W 400 MHZ 65V
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