PartNumber | MRFX600HR5 | MRFX600HSR5 |
Description | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V |
Manufacturer | NXP | NXP |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors |
RoHS | Y | Y |
Transistor Polarity | N-Channel | N-Channel |
Technology | Si | Si |
Id Continuous Drain Current | 32 A | 32 A |
Vds Drain Source Breakdown Voltage | 193 V | 193 V |
Gain | 26.4 dB | 26.4 dB |
Output Power | 600 W | 600 W |
Minimum Operating Temperature | - 40 C | - 40 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Mounting Style | Screw Mount | SMD/SMT |
Package / Case | NI-780H-4L | NI-780S-4L |
Packaging | Reel | Reel |
Operating Frequency | 1.8 MHz to 400 MHz | 1.8 MHz to 400 MHz |
Series | MRFX600 | MRFX600 |
Type | RF Power MOSFET | RF Power MOSFET |
Brand | NXP Semiconductors | NXP Semiconductors |
Number of Channels | 2 Channel | 2 Channel |
Pd Power Dissipation | 1.333 kW | 1.333 kW |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors |
Factory Pack Quantity | 50 | 50 |
Subcategory | MOSFETs | MOSFETs |
Vgs Gate Source Voltage | - 6 V, 10 V | - 6 V, 10 V |
Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V |
Part # Aliases | 935376369178 | 935376371178 |