PartNumber | MW6S010NR1 | MW6S010NR |
Description | RF MOSFET Transistors HV6 900MHZ 10W TO270-2N | |
Manufacturer | NXP | FSL |
Product Category | RF MOSFET Transistors | Module |
RoHS | E | - |
Transistor Polarity | N-Channel | - |
Technology | Si | - |
Id Continuous Drain Current | 125 mA | - |
Vds Drain Source Breakdown Voltage | 68 V | - |
Minimum Operating Temperature | - 65 C | - |
Maximum Operating Temperature | + 150 C | - |
Mounting Style | SMD/SMT | - |
Package / Case | TO-270 | - |
Packaging | Reel | - |
Configuration | Single | - |
Series | MW6S010N | - |
Type | RF Power MOSFET | - |
Brand | NXP / Freescale | - |
Channel Mode | Enhancement | - |
Moisture Sensitive | Yes | - |
Pd Power Dissipation | 61.4 W | - |
Product Type | RF MOSFET Transistors | - |
Factory Pack Quantity | 500 | - |
Subcategory | MOSFETs | - |
Vgs Gate Source Voltage | - 0.5 V, 12 V | - |
Vgs th Gate Source Threshold Voltage | 2.3 V | - |
Part # Aliases | 935319268528 | - |
Unit Weight | 0.018679 oz | - |