PartNumber | NJVMJD45H11T4G-VF01 | NJVMJD45H11T4G |
Description | Bipolar Transistors - BJT BIP PNP 8A 80V TR | Bipolar Transistors - BJT BIP DPAK PNP 8A 80V TR |
Manufacturer | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | DPAK-3 | DPAK-3 |
Transistor Polarity | PNP | PNP |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | 80 V | 80 V |
Emitter Base Voltage VEBO | 5 V | 5 V |
Collector Emitter Saturation Voltage | 1 V | 1 V |
Maximum DC Collector Current | 16 A | 16 A |
Gain Bandwidth Product fT | 90 MHz | 90 MHz |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Series | MJD45H11 | MJD45H11 |
Packaging | Reel | Reel |
Brand | ON Semiconductor | ON Semiconductor |
Continuous Collector Current | 8 A | 8 A |
DC Collector/Base Gain hfe Min | 60 | 60 |
Pd Power Dissipation | 20 W | 20 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 2500 | 2500 |
Subcategory | Transistors | Transistors |
Qualification | - | AEC-Q101 |
Unit Weight | - | 0.009185 oz |