PartNumber | NSVT65011MW6T1G | NSVT65010MW6T1G | NSVT489AMT1G |
Description | Bipolar Transistors - BJT Dual Matched NPN Tra | Bipolar Transistors - BJT Dual Matched PNP Tra | Bipolar Transistors - BJT SS TSOP-6 NPN 30V |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF |
RoHS | Y | Y | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-363-6 | SOT-363-6 | - |
Transistor Polarity | NPN | PNP | NPN |
Configuration | Dual | Dual | Single |
Collector Emitter Voltage VCEO Max | 65 V | - 65 V | - |
Collector Base Voltage VCBO | 80 V | - 80 V | - |
Emitter Base Voltage VEBO | 6 V | - 5 V | - |
Collector Emitter Saturation Voltage | 600 mV | - 300 mV | - |
Maximum DC Collector Current | 100 mA | - 100 mA | 2 A |
Gain Bandwidth Product fT | 100 MHz | 100 MHz | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Packaging | Reel | Reel | Reel |
Brand | ON Semiconductor | ON Semiconductor | - |
Pd Power Dissipation | 380 mW | 380 mW | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | Transistors | Transistors | - |
Unit Weight | 0.000265 oz | 0.000265 oz | - |
Series | - | - | NST489 |
Pd Power Dissipation | - | - | 1.18 W |
Collector Emitter Voltage VCEO Max | - | - | 30 V |
Collector Base Voltage VCBO | - | - | 50 V |
Emitter Base Voltage VEBO | - | - | 5 V |
DC Collector Base Gain hfe Min | - | - | 300 at 1 mA at 5 V 300 at 0.5 A at 5 V 200 at 1 A at 5 V |