 |  |  | |
| PartNumber | NSVBSS63LT1G | NSVBCX17LT1G | NSVBSP19AT1G |
| Description | Bipolar Transistors - BJT SS SOT23 DR XSTR PNP 100V | Bipolar Transistors - Pre-Biased SS SOT23 GP XSTR PNP 45V | TRANS NPN 350V 0.1A SOT223 |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - Pre-Biased | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 100 V | - | - |
| Collector Emitter Saturation Voltage | - 250 mV | - | - |
| Maximum DC Collector Current | - 100 mA | - | - |
| Gain Bandwidth Product fT | 95 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BSS63L | - | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| DC Collector/Base Gain hfe Min | 30 | - | - |
| Pd Power Dissipation | 225 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors - Pre-Biased | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000282 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor |
NSVBT2222ADW1T1G | Bipolar Transistors - BJT SS SC88 GP XSTR NPN 40V | |
| NSVBSS63LT1G | Bipolar Transistors - BJT SS SOT23 DR XSTR PNP 100V | ||
| NSVBSS63LT1G | Bipolar Transistors - BJT SS SOT23 DR XSTR PNP 100V | ||
| NSVBCX17LT1G | TRANS PNP 45V 0.5A SOT23 | ||
| NSVBSP19AT1G | TRANS NPN 350V 0.1A SOT223 | ||
| NSVBT2222ADW1T1G | TRANS 2NPN 40V 0.6A SOT363 |