 |  | |
| PartNumber | NTMFS5832NLT1G | NTMFS5832NL |
| Description | MOSFET NFET SO8FL 40V 110A 4.2MO | |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SO-FL-8 | - |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | - |
| Id Continuous Drain Current | 20 A | - |
| Rds On Drain Source Resistance | 6.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - |
| Qg Gate Charge | 25 nC | - |
| Pd Power Dissipation | 3.1 W | - |
| Packaging | Reel | Reel |
| Series | NTMFS5832NL | NTMFS5832NL |
| Brand | ON Semiconductor | - |
| Forward Transconductance Min | 21 S | - |
| Fall Time | 8 ns | 8 ns |
| Product Type | MOSFET | - |
| Rise Time | 24 ns | 24 ns |
| Factory Pack Quantity | 1500 | - |
| Subcategory | MOSFETs | - |
| Package Case | - | SO-8FL |
| Pd Power Dissipation | - | 3.1 W |
| Id Continuous Drain Current | - | 20 A |
| Vds Drain Source Breakdown Voltage | - | 40 V |
| Vgs th Gate Source Threshold Voltage | - | 3 V |
| Rds On Drain Source Resistance | - | 6.5 mOhms |
| Qg Gate Charge | - | 25 nC |
| Forward Transconductance Min | - | 21 S |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor |
NTMFS5832NLT1G | MOSFET NFET SO8FL 40V 110A 4.2MO | |
| NTMFS5832NLT1G | MOSFET N-CH 40V 110A SO-8FL | ||
| NTMFS5832NL | New and Original |