PartNumber | NVD5862NT4G | NVD5807NT4G | NVD5806NT4G |
Description | MOSFET NFET 60V 98A 5.7MOHM | MOSFET POWER MOSFET | MOSFET POWER MOSFET 40V |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 40 V | 40 V |
Id Continuous Drain Current | 98 A | 23 A | 33 A |
Rds On Drain Source Resistance | 5.7 mOhms | 20 mOhms | 12.7 mOhms |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Packaging | Reel | Reel | Reel |
Series | NVD5862N | NTD5807N | NTD5806N |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Number of Channels | - | 1 Channel | 1 Channel |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Qg Gate Charge | - | 12.6 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | + 175 C |
Pd Power Dissipation | - | 33 W | 40 W |
Configuration | - | Single | Single |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Forward Transconductance Min | - | 8.1 S | - |
Fall Time | - | 2 ns | - |
Rise Time | - | 20.4 ns | - |
Part # Aliases | - | - | SVD5806NT4G |