PartNumber | PBSS4160XF | PBSS4160V,115 | PBSS4160U,115 |
Description | Bipolar Transistors - BJT 60 V, 1 A NPN low VCEsat BISS transistor | Bipolar Transistors - BJT TRANS BISS TAPE-7 | Bipolar Transistors - BJT LO VCESAT(BISS)TRANS |
Manufacturer | Nexperia | Nexperia | Nexperia |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-89-3 | SSmini-6 | UMT-3 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 60 V | 60 V | 60 V |
Collector Base Voltage VCBO | 60 V | 80 V | 80 V |
Emitter Base Voltage VEBO | 7 V | 5 V | 5 V |
Collector Emitter Saturation Voltage | 200 mV | - | - |
Maximum DC Collector Current | 1 A | 1 A | 1 A |
Gain Bandwidth Product fT | 180 MHz | 220 MHz | 220 MHz |
Minimum Operating Temperature | - 55 C | - 65 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
DC Current Gain hFE Max | 360 | - | - |
Packaging | Reel | Reel | Reel |
Brand | Nexperia | Nexperia | Nexperia |
Continuous Collector Current | 1 A | - | - |
DC Collector/Base Gain hfe Min | 170 | - | - |
Pd Power Dissipation | 1.35 W | 500 mW | 415 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 4000 | 4000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Height | - | 0.6 mm | 1 mm |
Length | - | 1.7 mm | 2.2 mm |
Width | - | 1.3 mm | 1.35 mm |
Part # Aliases | - | PBSS4160V T/R | PBSS4160U T/R |
Unit Weight | - | 0.000212 oz | 0.000198 oz |