PSMN034-100PS

PSMN034-100PS,127 vs PSMN034-100PS

 
PartNumberPSMN034-100PS,127PSMN034-100PS
DescriptionMOSFET N-CH 100V STD LEVEL MOSFETMOSFET,N CHANNEL,100V,32A,TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:32A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.0293ohm, Rds(on) Test Voltage Vgs:10V,
ManufacturerNexperia-
Product CategoryMOSFET-
RoHSY-
TechnologySi-
Mounting StyleThrough Hole-
Package / CaseTO-220-3-
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage100 V-
Id Continuous Drain Current32 A-
Rds On Drain Source Resistance62 mOhms-
Vgs th Gate Source Threshold Voltage4.8 V-
Vgs Gate Source Voltage20 V-
Qg Gate Charge23.8 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 175 C-
Pd Power Dissipation86 W-
ConfigurationSingle-
Channel ModeEnhancement-
PackagingTube-
Height9.4 mm-
Length10.3 mm-
Transistor Type1 N-Channel-
TypeN-Channel 100 V 34.5 mOhms Standard Level MOSFET in TO220-
Width4.7 mm-
BrandNexperia-
Fall Time9 ns-
Product TypeMOSFET-
Rise Time10 ns-
Factory Pack Quantity50-
SubcategoryMOSFETs-
Typical Turn Off Delay Time28 ns-
Typical Turn On Delay Time12 ns-
Unit Weight0.211644 oz-
Manufacturer Part # Description RFQ
Nexperia
Nexperia
PSMN034-100PS,127 MOSFET N-CH 100V STD LEVEL MOSFET
PSMN034-100PS,127 MOSFET N-CH 100V TO220AB
PSMN034-100PS MOSFET,N CHANNEL,100V,32A,TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:32A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.0293ohm, Rds(on) Test Voltage Vgs:10V,
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