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| PartNumber | PSMN3R9-60PSQ | PSMN3R9-60PS |
| Description | MOSFET N-channel 60 V 3.9 mo FET | |
| Manufacturer | Nexperia | - |
| Product Category | MOSFET | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | Through Hole | - |
| Package / Case | TO-220-3 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - |
| Id Continuous Drain Current | 130 A | - |
| Rds On Drain Source Resistance | 2.94 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 103 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 263 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Tube | - |
| Transistor Type | 1 N-Channel | - |
| Brand | Nexperia | - |
| Fall Time | 45 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 41.4 ns | - |
| Factory Pack Quantity | 50 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 62.7 ns | - |
| Typical Turn On Delay Time | 25.3 ns | - |
| Unit Weight | 0.211644 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
PSMN3R9-60PSQ | MOSFET N-channel 60 V 3.9 mo FET | |
| PSMN3R9-60PSQ | Darlington Transistors MOSFET N-channel 60 V 3.9 mo FET | ||
| PSMN3R9-60PS | New and Original |