| PartNumber | RM5N650T2 | RM5N700IP | RM5N700LD-T |
| Description | MOSFET TO-220 MOSFET | MOSFET TO-251 MOSFET | MOSFET D-PAK MOSFET |
| Manufacturer | Rectron | Rectron | Rectron |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | SMD/SMT |
| Package / Case | TO-220-3 | TO-251-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 700 V | 700 V |
| Id Continuous Drain Current | 5 A | 5 A | 5 A |
| Rds On Drain Source Resistance | 900 mOhms | 950 mOhms | 950 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | 2.5 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 20 nC | 20 nC | 20 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Rectron | Rectron | Rectron |
| Forward Transconductance Min | 4.8 S | 4.8 S | 4.8 S |
| Fall Time | 9 ns | 9 ns | 9 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 3 ns | 3 ns | 3 ns |
| Factory Pack Quantity | 1000 | 800 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 50 ns | 50 ns | 50 ns |
| Typical Turn On Delay Time | 6 ns | 6 ns | 6 ns |
| Pd Power Dissipation | - | 49 W | 49 W |