PartNumber | RMWV3216AGBG-5S2#AC0 | RMW200N03TB | RMW280N03TB |
Description | SRAM SRAM 32MB 3V X16 FBGA48 55NS -40TO85C | MOSFET RECOMMENDED ALT 755-RS1E200GNTB | MOSFET RECOMMENDED ALT 755-RS1E280GNTB |
Manufacturer | Renesas Electronics | ROHM Semiconductor | ROHM Semiconductor |
Product Category | SRAM | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Memory Size | 32 Mbit | - | - |
Access Time | 55 ns | - | - |
Supply Voltage Max | 3.6 V | - | - |
Supply Voltage Min | 2.7 V | - | - |
Supply Current Max | 30 mA | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 85 C | - | - |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | FBGA-48 | PSOP-8 | PSOP-8 |
Packaging | Tray | Reel | Reel |
Type | LPSRAM | - | - |
Brand | Renesas Electronics | ROHM Semiconductor | ROHM Semiconductor |
Moisture Sensitive | Yes | - | - |
Product Type | SRAM | MOSFET | MOSFET |
Factory Pack Quantity | 253 | 2500 | 2500 |
Subcategory | Memory & Data Storage | MOSFETs | MOSFETs |
Technology | - | Si | Si |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 30 V | 30 V |
Id Continuous Drain Current | - | 20 A | 28 A |
Rds On Drain Source Resistance | - | 4.2 mOhms | 2.8 mOhms |
Pd Power Dissipation | - | 3 W | 3 W |
Configuration | - | Single | Single |
Transistor Type | - | 1 N-channel | 1 N-channel |
Part # Aliases | - | RMW200N03 | RMW280N03 |