PartNumber | RN1106MFV,L3F | RN1107(T5L,F,T) | RN1106MFV(TPL3) |
Description | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 47Kohms |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
RoHS | Y | Y | N |
Configuration | Single | Single | Single |
Transistor Polarity | NPN | NPN | NPN |
Typical Input Resistor | 4.7 kOhms | 10 kOhms | 4.7 kOhms |
Typical Resistor Ratio | 0.1 | 0.213 | 0.1 |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-723-3 | SOT-416-3 | - |
DC Collector/Base Gain hfe Min | 80 | 80 | 80 |
Maximum Operating Frequency | - | - | - |
Collector Emitter Voltage VCEO Max | 50 V | 50 V | 50 V |
Continuous Collector Current | 100 mA | 100 mA | 100 mA |
Peak DC Collector Current | - | - | 100 mA |
Pd Power Dissipation | 150 mW | 100 mW | 150 mW |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Series | RN1106MFV | RN1107 | RN1106MFV |
Emitter Base Voltage VEBO | 5 V | 6 V | - |
Brand | Toshiba | Toshiba | Toshiba |
Channel Mode | Enhancement | - | - |
Maximum DC Collector Current | 100 mA | 100 mA | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity | 8000 | 3000 | 8000 |
Subcategory | Transistors | Transistors | Transistors |
Packaging | - | Reel | Reel |
Unit Weight | - | 0.000212 oz | - |
DC Current Gain hFE Max | - | - | 80 |