PartNumber | RN1111MFV,L3F | RN1112MFV(TL3,T) | RN1112MFV(TPL3) |
Description | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor | Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 22kohm | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 22Kohms |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
RoHS | Y | Y | N |
Configuration | Single | - | Single |
Transistor Polarity | NPN | - | NPN |
Typical Input Resistor | 10 kOhms | - | - |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SOT-723-3 | - | VESM-3 |
DC Collector/Base Gain hfe Min | 120 | - | 700 |
Collector Emitter Voltage VCEO Max | 50 V | - | 50 V |
Continuous Collector Current | 100 mA | - | 100 mA |
Pd Power Dissipation | 150 mW | - | 150 mW |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Series | RN1111MFV | RN1112MFV | RN1112MFV |
Packaging | Reel | Reel | Reel |
Emitter Base Voltage VEBO | 5 V | - | 5 V |
Brand | Toshiba | Toshiba | Toshiba |
Number of Channels | 1 Channel | - | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity | 8000 | 8000 | 8000 |
Subcategory | Transistors | Transistors | Transistors |
Collector Base Voltage VCBO | - | - | 50 V |
DC Current Gain hFE Max | - | - | 120 @ 1mA @ 5V |
Height | - | - | 0.5 mm |
Length | - | - | 1.2 mm |
Width | - | - | 0.8 mm |