PartNumber | RSD131P10TL | RSD130P10TL | RSD100N10TL |
Description | MOSFET Trans MOSFET P-CH 100V 13A | MOSFET Pch -100V -13A MOSFET | MOSFET PWR MOSFET 4V |
Manufacturer | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Transistor Polarity | P-Channel | P-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
Id Continuous Drain Current | 13 A | 13 A | 10 A |
Rds On Drain Source Resistance | 200 mOhms | - | 133 mOhms |
Packaging | Reel | Reel | Reel |
Series | RSD131P10 | - | RSD100N10 |
Brand | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | RSD131P10 | RSD130P10 | RSD100N10 |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Number of Channels | - | - | 1 Channel |
Vgs th Gate Source Threshold Voltage | - | - | 2.5 V |
Vgs Gate Source Voltage | - | - | 20 V |
Qg Gate Charge | - | - | 18 nC |
Minimum Operating Temperature | - | - | - 55 C |
Pd Power Dissipation | - | - | 20 W |
Configuration | - | - | Single |
Transistor Type | - | - | 1 N-Channel |
Fall Time | - | - | 20 ns |
Rise Time | - | - | 17 ns |
Typical Turn Off Delay Time | - | - | 50 ns |
Typical Turn On Delay Time | - | - | 10 ns |