 |  | | |
| PartNumber | S29GL512S11TFIV13 | S29GL512S11TFIV20 | S29GL512S11TFIV23 |
| Description | NOR Flash Nor | NOR Flash 512 MBIT 3V 110NS Parallel NOR Flash | NOR Flash Nor |
| Manufacturer | Cypress Semiconductor | Cypress Semiconductor | Cypress Semiconductor |
| Product Category | NOR Flash | NOR Flash | NOR Flash |
| RoHS | Y | Y | Y |
| Series | S29GL512S | S29GL512S | S29GL512S |
| Packaging | Reel | Tray | Reel |
| Memory Type | NOR | NOR | NOR |
| Brand | Cypress Semiconductor | Cypress Semiconductor | Cypress Semiconductor |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | NOR Flash | NOR Flash | NOR Flash |
| Factory Pack Quantity | 1000 | 91 | 1000 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | TSOP-56 | - |
| Memory Size | - | 512 Mbit | - |
| Interface Type | - | Parallel | - |
| Organization | - | 32 M x 16 | - |
| Timing Type | - | Asynchronous | - |
| Data Bus Width | - | 16 bit | - |
| Supply Voltage Min | - | 2.7 V | - |
| Supply Voltage Max | - | 3.6 V | - |
| Supply Current Max | - | 60 mA | - |
| Minimum Operating Temperature | - | - 40 C | - |
| Maximum Operating Temperature | - | + 85 C | - |
| Speed | - | 110 ns | - |
| Architecture | - | Sector | - |
| Unit Weight | - | 0.241415 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Cypress Semiconductor |
S29GL512S11TFIV13 | NOR Flash Nor | |
| S29GL512S11TFV010 | NOR Flash Nor | ||
| S29GL512S11TFIV20 | NOR Flash 512 MBIT 3V 110NS Parallel NOR Flash | ||
| S29GL512S11TFV020 | NOR Flash Nor | ||
| S29GL512S11TFIV23 | NOR Flash Nor | ||
| S29GL512S11WEIV19 | NOR Flash Nor | ||
| S29GL512S11TFV023 | NOR Flash Nor | ||
| S29GL512S11TFV013 | NOR Flash Nor | ||
| S29GL512S11TFV010 | Flash Memory 512 MBIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED | ||
| S29GL512S11TFV020 | Flash Memory 512 MBIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED | ||
| S29GL512S11WEIV19 | Flash Memory 512 MBIT, 3V, 110NS, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, VIO, HIGHEST ADDRESS SECTOR PROTECTED | ||
| S29GL512S11TFIV13 | Flash Memory 512 MBIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, VIO, HIGHEST ADDRESS SECTOR PROTECTED | ||
| S29GL512S11TFV013 | Flash Memory 512 MBIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED | ||
| S29GL512S11TFV023 | Flash Memory 512 MBIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED | ||
| S29GL512S11TFIV23 | Flash Memory 512 MBIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, VIO, LOWEST ADDRESS SECTOR PROTECTED | ||
| S29GL512S11TFIV20 | IC FLASH 512M PARALLEL 56TSOP |