 | | | |
| PartNumber | S29GL512T12TFVV10 | S29GL512T12TFVV20 | S29GL512T12TFVV23 |
| Description | NOR Flash NOR | NOR Flash NOR | NOR Flash IC 512 Mb FLASHMEM |
| Manufacturer | Cypress Semiconductor | Cypress Semiconductor | Cypress Semiconductor |
| Product Category | NOR Flash | NOR Flash | NOR Flash |
| RoHS | Y | Y | Y |
| Series | S29GL512T | S29GL512T | S29GL512T |
| Packaging | Tray | Tray | Reel |
| Memory Type | NOR | NOR | NOR |
| Brand | Cypress Semiconductor | Cypress Semiconductor | Cypress Semiconductor |
| Product Type | NOR Flash | NOR Flash | NOR Flash |
| Factory Pack Quantity | 91 | 91 | 1000 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Mounting Style | - | - | SMD/SMT |
| Package / Case | - | - | TSOP-56 |
| Memory Size | - | - | 512 Mbit |
| Organization | - | - | 64 M x 8 |
| Timing Type | - | - | Asynchronous |
| Data Bus Width | - | - | 8 bit, 16 bit |
| Supply Voltage Min | - | - | 2.7 V |
| Supply Voltage Max | - | - | 3.6 V |
| Supply Current Max | - | - | 100 mA, 60 mA |
| Minimum Operating Temperature | - | - | - 40 C |
| Maximum Operating Temperature | - | - | + 105 C |
| Speed | - | - | 120 ns |
| Moisture Sensitive | - | - | Yes |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Cypress Semiconductor |
S29GL512T12TFVV20 | NOR Flash NOR | |
| S29GL512T13TFNV10 | NOR Flash Nor | ||
| S29GL512T13TFNV20 | NOR Flash Nor | ||
| S29GL512T13TFNV13 | NOR Flash Nor | ||
| S29GL512T13TFNV23 | NOR Flash Nor | ||
| S29GL512T13DHNV10 | NOR Flash Nor | ||
| S29GL512T12TFVV23 | NOR Flash IC 512 Mb FLASHMEM | ||
| S29GL512T13DHNV13 | NOR Flash Nor | ||
| S29GL512T13DHNV23 | NOR Flash Nor | ||
| S29GL512T12TFVV10 | NOR Flash Parallel 3V/3.3V 512M-bit 64M x 8/32M x 16 120ns 56-Pin TSOP Tray | ||
| S29GL512T12TFVV20 | NOR Flash Parallel 3V/3.3V 512M-bit 64M x 8/32M x 16 120ns 56-Pin TSOP Tray | ||
| S29GL512T12TFVV23 | IC 512 MB FLASH MEMORY | ||
| S29GL512T13TFNV20 | Flash Memory 512 MBIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 45 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED, VIO | ||
| S29GL512T13TFNV10 | Flash Memory 512 MBIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 45 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED, VIO | ||
| S29GL512T13TFNV13 | Flash Memory 512 MBIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 45 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED, VIO | ||
| S29GL512T13DHNV13 | IC FLASH 512M PARALLEL GL-T | ||
| S29GL512T13DHNV23 | IC FLASH 512M PARALLEL GL-T | ||
| S29GL512T13DHNV10 | IC FLASH 512M PARALLEL GL-T | ||
| S29GL512T13TFNV23 | Flash Memory 512 MBIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 45 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED, VIO |