PartNumber | SI1015-C-GM2R | SI1016CX-T1-GE3 | SI1016X-T1-E3 |
Description | RF Microcontrollers - MCU 8kB, 768B RAM, +13 dBm, programmable XCVR, DC-DC | MOSFET 20V Vds 8V Vgs SC89-6 N&P PAIR | MOSFET RECOMMENDED ALT 781-SI1016X-T1-GE3 |
Manufacturer | Silicon Laboratories | Vishay | Vishay |
Product Category | RF Microcontrollers - MCU | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Core | 8051 | - | - |
Operating Frequency | 240 MHz to 960 MHz | - | - |
Data Bus Width | 8 bit | - | - |
Program Memory Size | 8 kB | - | - |
Data RAM Size | 768 B | - | - |
Maximum Clock Frequency | 25 MHz | - | - |
ADC Resolution | 10 bit | - | - |
Operating Supply Voltage | 0.9 V to 3.6 V | - | - |
Maximum Operating Temperature | + 85 C | + 150 C | - |
Package / Case | LGA-42 | SC-89-6 | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Packaging | Reel | Reel | Reel |
Program Memory Type | Flash | - | - |
Series | SI1015 | SI1 | SI1 |
Brand | Silicon Labs | Vishay / Siliconix | Vishay / Siliconix |
Data RAM Type | RAM | - | - |
Interface Type | I2C, SPI, UART | - | - |
Minimum Operating Temperature | - 40 C | - 55 C | - |
Moisture Sensitive | Yes | - | - |
Number of ADC Channels | 1 | - | - |
Number of Timers | 4 Timer | - | - |
Processor Series | Si101x | - | - |
Product Type | RF Microcontrollers - MCU | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 3000 | 3000 |
Subcategory | Wireless & RF Integrated Circuits | MOSFETs | MOSFETs |
Supply Voltage Max | 3.6 V | - | - |
Supply Voltage Min | 0.9 V | - | - |
Technology | - | Si | Si |
Number of Channels | - | 2 Channel | - |
Transistor Polarity | - | N-Channel, P-Channel | - |
Vds Drain Source Breakdown Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 350 mA, 500 mA | - |
Rds On Drain Source Resistance | - | 396 mOhms, 756 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 400 mV | - |
Vgs Gate Source Voltage | - | 8 V | - |
Qg Gate Charge | - | 1.3 nC, 1.65 nC | - |
Pd Power Dissipation | - | 220 mW | - |
Configuration | - | Dual | - |
Channel Mode | - | Enhancement | - |
Tradename | - | TrenchFET | TrenchFET |
Transistor Type | - | 1 N-Channel, 1 P-Channel | - |
Forward Transconductance Min | - | 1 S, 2 S | - |
Fall Time | - | 8 ns, 11 ns | - |
Rise Time | - | 10 ns, 16 ns | - |
Typical Turn Off Delay Time | - | 10 ns, 26 ns | - |
Typical Turn On Delay Time | - | 9 ns, 11 ns | - |
Unit Weight | - | 0.000106 oz | 0.001129 oz |
Part # Aliases | - | - | SI1016X-E3 |