PartNumber | SI1499DH-T1-E3 | SI1499DH-T1-GE3 |
Description | MOSFET 8.0V 1.6A 2.78W 78 mohms @ 4.5V | MOSFET -8V -1.6A 2.78W |
Manufacturer | Vishay | Vishay |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | - |
Package / Case | SOT-363-6 | - |
Number of Channels | 1 Channel | - |
Transistor Polarity | P-Channel | - |
Vds Drain Source Breakdown Voltage | 8 V | - |
Id Continuous Drain Current | 1.6 A | - |
Rds On Drain Source Resistance | 78 mOhms | - |
Vgs th Gate Source Threshold Voltage | 350 mV | - |
Vgs Gate Source Voltage | 4.5 V | - |
Qg Gate Charge | 10.5 nC | - |
Minimum Operating Temperature | - 55 C | - |
Maximum Operating Temperature | + 150 C | - |
Pd Power Dissipation | 2.78 W | - |
Configuration | Single | - |
Channel Mode | Enhancement | - |
Tradename | TrenchFET | TrenchFET |
Packaging | Reel | Reel |
Height | 1 mm | - |
Length | 2.1 mm | - |
Series | SI1 | SI1 |
Transistor Type | 1 P-Channel | - |
Width | 1.25 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 8 S | - |
Fall Time | 60 ns | - |
Product Type | MOSFET | MOSFET |
Rise Time | 40 ns | - |
Factory Pack Quantity | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 50 ns | - |
Typical Turn On Delay Time | 9 ns | - |
Part # Aliases | SI1499DH-E3 | - |
Unit Weight | 0.000265 oz | 0.000265 oz |