SI1499DH-T1-E3

SI1499DH-T1-E3 vs SI1499DH-T1-E3-CUT TAPE

 
PartNumberSI1499DH-T1-E3SI1499DH-T1-E3-CUT TAPE
DescriptionMOSFET 8.0V 1.6A 2.78W 78 mohms @ 4.5V
ManufacturerVishay-
Product CategoryMOSFET-
RoHSY-
TechnologySi-
Mounting StyleSMD/SMT-
Package / CaseSOT-363-6-
Number of Channels1 Channel-
Transistor PolarityP-Channel-
Vds Drain Source Breakdown Voltage8 V-
Id Continuous Drain Current1.6 A-
Rds On Drain Source Resistance78 mOhms-
Vgs th Gate Source Threshold Voltage350 mV-
Vgs Gate Source Voltage4.5 V-
Qg Gate Charge10.5 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation2.78 W-
ConfigurationSingle-
Channel ModeEnhancement-
TradenameTrenchFET-
PackagingReel-
Height1 mm-
Length2.1 mm-
SeriesSI1-
Transistor Type1 P-Channel-
Width1.25 mm-
BrandVishay / Siliconix-
Forward Transconductance Min8 S-
Fall Time60 ns-
Product TypeMOSFET-
Rise Time40 ns-
Factory Pack Quantity3000-
SubcategoryMOSFETs-
Typical Turn Off Delay Time50 ns-
Typical Turn On Delay Time9 ns-
Part # AliasesSI1499DH-E3-
Unit Weight0.000265 oz-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI1499DH-T1-E3 MOSFET 8.0V 1.6A 2.78W 78 mohms @ 4.5V
Vishay
Vishay
SI1499DH-T1-E3 MOSFET P-CH 8V 1.6A SC70-6
SI1499DH-T1-E3-CUT TAPE New and Original
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