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| PartNumber | SI2309CDS-T1-GE3 | SI2309DS | SI2309CDS-T1-E3 |
| Description | MOSFET -60V Vds 20V Vgs SOT-23 | MOSFET Plastic-Encapsulated MOSFET P-CH-60V | MOSFET -60V Vds 20V Vgs SOT-23 |
| Manufacturer | Vishay | Rectron | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-23-3 | - | SOT-23-3 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | P-Channel | - | P-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | - | 60 V |
| Id Continuous Drain Current | 1.6 A | - | 1.6 A |
| Rds On Drain Source Resistance | 345 mOhms | - | 345 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | - | 1 V |
| Vgs Gate Source Voltage | 10 V | - | 1 V |
| Qg Gate Charge | 4.1 nC | - | 4.1 nC |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 1.7 W | - | 1.7 W |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | TrenchFET | - | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 1.45 mm | - | 1.45 mm |
| Length | 2.9 mm | - | 2.9 mm |
| Series | SI2 | - | SI2 |
| Transistor Type | 1 P-Channel | - | 1 P-Channel |
| Width | 1.6 mm | - | 1.6 mm |
| Brand | Vishay / Siliconix | Rectron | Vishay / Siliconix |
| Forward Transconductance Min | 2.8 S | - | 2.8 S |
| Fall Time | 10 ns | - | 10 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns | - | 10 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 15 ns | - | 15 ns |
| Typical Turn On Delay Time | 5 ns | - | 5 ns |
| Part # Aliases | SI2309CDS-GE3 | - | SI2309CDS-E3 |
| Unit Weight | 0.000282 oz | - | 0.000282 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2309CDS-T1-GE3 | MOSFET -60V Vds 20V Vgs SOT-23 | |
| SI2309DS-T1-E3 | MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 | ||
| SI2309CDS-T1-E3 | MOSFET -60V Vds 20V Vgs SOT-23 | ||
Rectron |
SI2309DS | MOSFET Plastic-Encapsulated MOSFET P-CH-60V | |
| SI2309DS | MOSFET Plastic-Encapsulated MOSFET P-CH-60V | ||
| SI2308DS-T1-ES , MAX6425 | New and Original | ||
| SI2308DS-T1-GE3 | N CH MOSFET, Transistor Polarity:N Channel, Continuous Drain Current Id:2A, Drain Source Voltage Vds:60V, On Resistance Rds(on):125mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:3 | ||
| SI2309 | New and Original | ||
| SI2309ADS-T1-GE3 | New and Original | ||
| SI2309BDS-T1-E3 | New and Original | ||
| SI2309CDS | New and Original | ||
| SI2309CDS SOT23-3 | New and Original | ||
| SI2309CDS-TI-GE3 | New and Original | ||
| SI2309DS , M1MA151KT2 | New and Original | ||
| SI2309DS-T1 | MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 | ||
| SI2309DS-T1-GE3 | P CH MOSFET, Transistor Polarity:P Channel, Continuous Drain Current Id:-1.25A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):275mohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs | ||
| SI2309DS-TI | New and Original | ||
| SI2309DS-TI-E3 | New and Original | ||
| SI2309DST1 | Small Signal Field-Effect Transistor, 0.00125A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | ||
| SI2309CDS-T1-E3-CUT TAPE | New and Original | ||
| SI2309CDS-T1-GE3-CUT TAPE | New and Original | ||
Vishay |
SI2309CDS-T1-E3 | MOSFET P-CH 60V 1.6A SOT23-3 | |
| SI2309CDS-T1-GE3 | MOSFET P-CH 60V 1.6A SOT23-3 | ||
| SI2309DS-T1-E3 | MOSFET P-CH 60V 1.25A SOT23-3 |