SI2343CDS-T1-GE3

SI2343CDS-T1-GE3 vs SI2343CDS-T1-GE3 (VISHAY)

 
PartNumberSI2343CDS-T1-GE3SI2343CDS-T1-GE3 (VISHAY)
DescriptionMOSFET -30V Vds 20V Vgs SOT-23
ManufacturerVishay-
Product CategoryMOSFET-
RoHSY-
TechnologySi-
Mounting StyleSMD/SMT-
Package / CaseSOT-23-3-
Number of Channels1 Channel-
Transistor PolarityP-Channel-
Vds Drain Source Breakdown Voltage30 V-
Id Continuous Drain Current5.9 A-
Rds On Drain Source Resistance45 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V-
Vgs Gate Source Voltage10 V-
Qg Gate Charge21 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation2.5 W-
ConfigurationSingle-
Channel ModeEnhancement-
TradenameTrenchFET-
PackagingReel-
SeriesSI2-
Transistor Type1 P-Channel-
BrandVishay / Siliconix-
Forward Transconductance Min10 S-
Fall Time8 ns-
Product TypeMOSFET-
Rise Time10 ns-
Factory Pack Quantity3000-
SubcategoryMOSFETs-
Typical Turn Off Delay Time18 ns-
Typical Turn On Delay Time8 ns-
Part # AliasesSI2343CDS-GE3-
Unit Weight0.000282 oz-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI2343CDS-T1-GE3 MOSFET -30V Vds 20V Vgs SOT-23
Vishay
Vishay
SI2343CDS-T1-GE3 MOSFET P-CH 30V 5.9A SOT-23
SI2343CDS-T1-GE3 (VISHAY) New and Original
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