SI3552DV-T1

SI3552DV-T1-GE3 vs SI3552DV-T1-E3 vs SI3552DV-T1

 
PartNumberSI3552DV-T1-GE3SI3552DV-T1-E3SI3552DV-T1
DescriptionMOSFET -30V Vds 20V Vgs TSOP-6 N&P PAIRMOSFET RECOMMENDED ALT 781-SI3552DV-GE3MOSFET RECOMMENDED ALT 781-SI3552DV-GE3
ManufacturerVishayVishayVISHAY
Product CategoryMOSFETMOSFETFETs - Arrays
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTSOP-6TSOP-6-
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current2.5 A, 1.8 A--
Rds On Drain Source Resistance105 mOhms, 200 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge3.2 nC, 3.6 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.15 W--
ConfigurationDual--
Channel ModeEnhancement--
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSI3SI3-
Transistor Type1 N-Channel, 1 P-Channel--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min4.3 S, 2.4 S--
Fall Time5 ns, 7 ns--
Product TypeMOSFETMOSFET-
Rise Time9 ns, 12 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time13 ns, 12 ns--
Typical Turn On Delay Time7 ns, 8 ns--
Part # AliasesSI3552DV-GE3SI3552DV-E3-
Unit Weight0.000705 oz0.000705 oz-
Height-1.1 mm-
Length-3.05 mm-
Width-1.65 mm-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI3552DV-T1-GE3 MOSFET -30V Vds 20V Vgs TSOP-6 N&P PAIR
SI3552DV-T1-E3 MOSFET RECOMMENDED ALT 781-SI3552DV-GE3
SI3552DV-T1 MOSFET RECOMMENDED ALT 781-SI3552DV-GE3
Vishay
Vishay
SI3552DV-T1-E3 MOSFET N/P-CH 30V 6TSOP
SI3552DV-T1-GE3 MOSFET N/P-CH 30V 6-TSOP
SI3552DV-T1-ER New and Original
SI3552DV-T1GE3 New and Original
SI3552DV-T1-E3-CUT TAPE New and Original
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