SI4

SI4100DY-T1-E3 vs SI4101DY-T1-GE3 vs SI4100DY-T1-GE3

 
PartNumberSI4100DY-T1-E3SI4101DY-T1-GE3SI4100DY-T1-GE3
DescriptionMOSFET 100V Vds 20V Vgs SO-8MOSFET -30V Vds 20V Vgs SO-8MOSFET 100V Vds 20V Vgs SO-8
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSEYE
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
Height1.75 mm--
Length4.9 mm--
SeriesSI4SI4SI4
Width3.9 mm--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity250025002500
SubcategoryMOSFETsMOSFETsMOSFETs
Part # AliasesSI4100DY-E3-SI4100DY-GE3
Unit Weight0.006596 oz0.017870 oz0.006596 oz
Number of Channels-1 Channel-
Transistor Polarity-P-Channel-
Vds Drain Source Breakdown Voltage-30 V-
Id Continuous Drain Current-25.7 A-
Rds On Drain Source Resistance-5 mOhms-
Vgs th Gate Source Threshold Voltage-2.5 V-
Vgs Gate Source Voltage-20 V-
Qg Gate Charge-203 nC-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Pd Power Dissipation-6 W-
Configuration-Single-
Channel Mode-Enhancement-
Transistor Type-1 P-Channel-
Forward Transconductance Min-72 S-
Fall Time-11 ns-
Rise Time-9 ns-
Typical Turn Off Delay Time-80 ns-
Typical Turn On Delay Time-20 ns-
  • Start with
  • SI4 2994
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
Si4103DY-T1-GE3 MOSFET -30V Vds 20V Vgs SO-8
SI4100DY-T1-E3 MOSFET 100V Vds 20V Vgs SO-8
SI4102DY-T1-GE3 MOSFET 100V Vds 20V Vgs SO-8
SI4101DY-T1-GE3 MOSFET -30V Vds 20V Vgs SO-8
SI4102DY-T1-E3 MOSFET RECOMMENDED ALT 781-SI4102DY-GE3
SI4104DY-T1-GE3 MOSFET RECOMMENDED ALT 781-SI4100DY-GE3
SI4108DY-T1-GE3 MOSFET RECOMMENDED ALT 78-SI4090DY-T1-GE3
SI4100DY-T1-GE3 MOSFET 100V Vds 20V Vgs SO-8
SI4104DY-T1-E3 MOSFET RECOMMENDED ALT 781-SI4100DY-GE3
Silicon Labs
Silicon Labs
SI4112-BM RF Wireless Misc
SI4112-BM IC SYNTHESIZER IF-ONLY 28MLP
Vishay
Vishay
SI4090DY-T1-GE3 IGBT Transistors MOSFET 100V 10mOhm@10V 19.7A N-Ch MV T-FET
SI4104DY-T1-E3 RF Bipolar Transistors MOSFET 100V 4.6A 5.0W 105mohm @ 10V
SI4100DY-T1-E3 MOSFET N-CH 100V 6.8A 8-SOIC
SI4100DY-T1-GE3 MOSFET N-CH 100V 6.8A 8-SOIC
SI4101DY-T1-GE3 MOSFET P-CH 30V 25.7A 8SOIC
SI4102DY-T1-E3 MOSFET N-CH 100V 3.8A 8-SOIC
SI4102DY-T1-GE3 MOSFET N-CH 100V 3.8A 8-SOIC
SI4104DY-T1-GE3 MOSFET N-CH 100V 4.6A 8-SOIC
SI4108DY-T1-GE3 MOSFET N-CH 75V 20.5A 8-SOIC
SI4110DY-T1-GE3 MOSFET N-CH 80V 17.3A 8-SOIC
SI4103DY-T1-GE3 MOSFET P-CHAN 30V SO-8
SI4088BDY New and Original
SI408L New and Original
SI4090DY New and Original
SI4090DY-T1-E3 New and Original
SI4100 New and Original
SI4100D New and Original
SI4100DY New and Original
SI4100DY-T1 New and Original
SI4100DY-TI-GE3 New and Original
SI4101DY New and Original
SI4101DY-T1-E3 New and Original
SI4102DY-E3 New and Original
SI4102DYT1E3 Small Signal Field-Effect Transistor, 2.7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SI4108DY New and Original
SI410A New and Original
SI410DY-T1 New and Original
SI4110 New and Original
SI41109DY-T1-E3 New and Original
SI4110BDY New and Original
SI4110DY New and Original
SI4112-01 New and Original
SI4100DY-T1-E3-CUT TAPE New and Original
SI408LAB New and Original
SI41105AA New and Original
SI410 New and Original
SI4104 New and Original
SI4108 New and Original
SI4112 New and Original
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