PartNumber | SI4434DY-T1-E3 | SI4434DY-T1-GE3 | Si4434ADY-T1-GE3 |
Description | MOSFET 250V Vds 20V Vgs SO-8 | MOSFET 250V Vds 20V Vgs SO-8 | MOSFET 250V Vds 20V Vgs SO-8 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | E | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SO-8 | - | SO-8 |
Tradename | TrenchFET | TrenchFET | - |
Packaging | Reel | Reel | Reel |
Height | 1.75 mm | - | - |
Length | 4.9 mm | - | - |
Series | SI4 | SI4 | - |
Width | 3.9 mm | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | SI4434DY-E3 | SI4434DY-GE3 | - |
Unit Weight | 0.006596 oz | 0.006596 oz | - |
Number of Channels | - | - | 1 Channel |
Transistor Polarity | - | - | N-Channel |
Vds Drain Source Breakdown Voltage | - | - | 250 V |
Id Continuous Drain Current | - | - | 4.1 A |
Rds On Drain Source Resistance | - | - | 150 mOhms |
Vgs th Gate Source Threshold Voltage | - | - | 2 V |
Vgs Gate Source Voltage | - | - | 10 V |
Qg Gate Charge | - | - | 10.9 nC |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 150 C |
Pd Power Dissipation | - | - | 6 W |
Configuration | - | - | Single |
Channel Mode | - | - | Enhancement |
Transistor Type | - | - | 1 N-Channel |
Forward Transconductance Min | - | - | 10 S |
Fall Time | - | - | 22 ns |
Rise Time | - | - | 22 ns |
Typical Turn Off Delay Time | - | - | 18 ns |
Typical Turn On Delay Time | - | - | 8 ns |