SI4403CDY

SI4403CDY-T1-GE3 vs SI4403CDY-T1-GE3-CUT TAPE vs SI4403CDY

 
PartNumberSI4403CDY-T1-GE3SI4403CDY-T1-GE3-CUT TAPESI4403CDY
DescriptionMOSFET 1.8V P-ChannelSmall Signal Field-Effect Transistor, 13.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current13.4 A--
Rds On Drain Source Resistance15.5 mOhms--
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge60 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation5 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
Height1.75 mm--
Length4.9 mm--
SeriesSI4--
Transistor Type1 P-Channel--
Width3.9 mm--
BrandVishay / Siliconix--
Forward Transconductance Min40 S--
Fall Time40 ns--
Product TypeMOSFET--
Rise Time16 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time101 ns--
Typical Turn On Delay Time14 ns--
Unit Weight0.017870 oz--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI4403CDY-T1-GE3 MOSFET 1.8V P-Channel
SI4403CDY-T1-GE3-CUT TAPE New and Original
SI4403CDY Small Signal Field-Effect Transistor, 13.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Vishay
Vishay
SI4403CDY-T1-GE3 MOSFET P-CH 20V 13.4A 8SOIC
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