SI4435

SI4435FDY-T1-GE3 vs SI4435DYTRPBF vs SI4435DYTRPBF-CUT TAPE

 
PartNumberSI4435FDY-T1-GE3SI4435DYTRPBFSI4435DYTRPBF-CUT TAPE
DescriptionMOSFET -30V Vds 20V Vgs SO-8MOSFET HEXFET P-CH Low 0.020 Ohm -30V
ManufacturerVishayInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current12.6 A8 A-
Rds On Drain Source Resistance30 mOhms35 mOhms-
Vgs th Gate Source Threshold Voltage2.2 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge13.5 nC40 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation4.8 W2.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Transistor Type1 P-Channel1 P-Channel-
BrandVishay / SiliconixInfineon / IR-
Forward Transconductance Min25 S--
Fall Time16 ns90 ns-
Product TypeMOSFETMOSFET-
Rise Time30 ns76 ns-
Factory Pack Quantity25004000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time21 ns130 ns-
Typical Turn On Delay Time26 ns16 ns-
Unit Weight0.002610 oz0.019048 oz-
Height-1.75 mm-
Length-4.9 mm-
Type-HEXFET Power MOSFET-
Width-3.9 mm-
Part # Aliases-SP001573756-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI4435FDY-T1-GE3 MOSFET -30V Vds 20V Vgs SO-8
Infineon / IR
Infineon / IR
SI4435DYTRPBF MOSFET HEXFET P-CH Low 0.020 Ohm -30V
SI4435DYTRPBF-CUT TAPE New and Original
Infineon Technologies
Infineon Technologies
SI4435DYTRPBF MOSFET P-CH 30V 8A 8-SOIC
SI4435TRPBF New and Original
Vishay
Vishay
SI4435FDY-T1-GE3 P-Channel 30 V (D-S) MOSFET
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