PartNumber | SI4435FDY-T1-GE3 | SI4435DYTRPBF | SI4435DYTRPBF-CUT TAPE |
Description | MOSFET -30V Vds 20V Vgs SO-8 | MOSFET HEXFET P-CH Low 0.020 Ohm -30V | |
Manufacturer | Vishay | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SO-8 | SO-8 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 12.6 A | 8 A | - |
Rds On Drain Source Resistance | 30 mOhms | 35 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.2 V | - | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 13.5 nC | 40 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 4.8 W | 2.5 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Transistor Type | 1 P-Channel | 1 P-Channel | - |
Brand | Vishay / Siliconix | Infineon / IR | - |
Forward Transconductance Min | 25 S | - | - |
Fall Time | 16 ns | 90 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 30 ns | 76 ns | - |
Factory Pack Quantity | 2500 | 4000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 21 ns | 130 ns | - |
Typical Turn On Delay Time | 26 ns | 16 ns | - |
Unit Weight | 0.002610 oz | 0.019048 oz | - |
Height | - | 1.75 mm | - |
Length | - | 4.9 mm | - |
Type | - | HEXFET Power MOSFET | - |
Width | - | 3.9 mm | - |
Part # Aliases | - | SP001573756 | - |