SI4435DDY-T

SI4435DDY-T1-E3 vs SI4435DDY-T1 vs SI4435DDY-T1-E

 
PartNumberSI4435DDY-T1-E3SI4435DDY-T1SI4435DDY-T1-E
DescriptionMOSFET -30V Vds 20V Vgs SO-8
ManufacturerVishay-VISHAY
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
TradenameTrenchFET--
PackagingReel-Reel
SeriesSI4-SI4435DDY
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Part # AliasesSI4435DDY-E3--
Unit Weight0.006596 oz-0.006596 oz
Part Aliases--SI4435DDY-E3
Mounting Style--SMD/SMT
Package Case--SOIC-Narrow-8
Number of Channels--1 Channel
Configuration--Single
Transistor Type--1 P-Channel
Pd Power Dissipation--2.5 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--12 ns 16 ns
Rise Time--8 ns 35 ns
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--8.1 A
Vds Drain Source Breakdown Voltage--- 30 V
Rds On Drain Source Resistance--24 mOhms
Transistor Polarity--P-Channel
Typical Turn Off Delay Time--45 ns 40 ns
Typical Turn On Delay Time--10 ns 42 ns
Channel Mode--Enhancement
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI4435DDY-T1-GE3 MOSFET -30V Vds 20V Vgs SO-8
SI4435DDY-T1-E3 MOSFET -30V Vds 20V Vgs SO-8
SI4435DDY-T1-E3-CUT TAPE New and Original
SI4435DDY-T1-GE3-CUT TAPE New and Original
SI4435DDY-T1 New and Original
SI4435DDY-T1-E New and Original
SI4435DDY-T1-E3 SOP8 New and Original
SI4435DDY-T1-E3. P-CHANNEL 30-V (D-S) MOSFET ROHS COMPLIANT: NO
SI4435DDY-TI-GE3 New and Original
Vishay
Vishay
SI4435DDY-T1-E3 MOSFET P-CH 30V 11.4A 8SOIC
SI4435DDY-T1-GE3 MOSFET P-CH 30V 11.4A 8-SOIC
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