SI4825DDY

SI4825DDY-T1-GE3 vs SI4825DDY

 
PartNumberSI4825DDY-T1-GE3SI4825DDY
DescriptionMOSFET -30V Vds 25V Vgs SO-8
ManufacturerVishay-
Product CategoryMOSFET-
RoHSE-
TechnologySi-
Mounting StyleSMD/SMT-
Package / CaseSO-8-
Number of Channels1 Channel-
Transistor PolarityP-Channel-
Vds Drain Source Breakdown Voltage30 V-
Id Continuous Drain Current14.9 A-
Rds On Drain Source Resistance12.5 mOhms-
Vgs th Gate Source Threshold Voltage1.4 V-
Vgs Gate Source Voltage10 V-
Qg Gate Charge57 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation5 W-
ConfigurationSingle-
Channel ModeEnhancement-
TradenameTrenchFET-
PackagingReel-
SeriesSI4-
Transistor Type1 P-Channel-
BrandVishay / Siliconix-
Forward Transconductance Min28 S-
Fall Time9 ns-
Product TypeMOSFET-
Rise Time12 ns-
Factory Pack Quantity2500-
SubcategoryMOSFETs-
Typical Turn Off Delay Time40 ns-
Typical Turn On Delay Time13 ns-
Part # AliasesSI4825DDY-GE3-
Unit Weight0.006596 oz-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI4825DDY-T1-GE3 MOSFET -30V Vds 25V Vgs SO-8
SI4825DDY New and Original
Vishay
Vishay
SI4825DDY-T1-GE3 MOSFET P-CH 30V 14.9A 8SOIC
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