 |  | |
| PartNumber | SI4925DDY-T1-GE3 | SI4925DDY-T1-GE3-CUT TAPE |
| Description | MOSFET -30V Vds 20V Vgs SO-8 | |
| Manufacturer | Vishay | - |
| Product Category | MOSFET | - |
| RoHS | E | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SO-8 | - |
| Number of Channels | 2 Channel | - |
| Transistor Polarity | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - |
| Id Continuous Drain Current | 8 A | - |
| Rds On Drain Source Resistance | 29 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - |
| Vgs Gate Source Voltage | 10 V | - |
| Qg Gate Charge | 32 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 5 W | - |
| Configuration | Dual | - |
| Channel Mode | Enhancement | - |
| Tradename | TrenchFET | - |
| Packaging | Reel | - |
| Height | 1.75 mm | - |
| Length | 4.9 mm | - |
| Series | SI4 | - |
| Transistor Type | 2 P-Channel | - |
| Width | 3.9 mm | - |
| Brand | Vishay / Siliconix | - |
| Forward Transconductance Min | 23 S | - |
| Fall Time | 12 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 8 ns | - |
| Factory Pack Quantity | 2500 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 45 ns | - |
| Typical Turn On Delay Time | 10 ns | - |
| Part # Aliases | SI4925DDY-GE3 | - |
| Unit Weight | 0.006596 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4925DDY-T1-GE3 | MOSFET -30V Vds 20V Vgs SO-8 | |
| SI4925DDY-T1-GE3-CUT TAPE | New and Original | ||
Vishay |
SI4925DDY-T1-GE3 | MOSFET 2P-CH 30V 8A 8-SOIC |