SI4925DDY

SI4925DDY-T1-GE3 vs SI4925DDY vs SI4925DDY-T1-E3

 
PartNumberSI4925DDY-T1-GE3SI4925DDYSI4925DDY-T1-E3
DescriptionMOSFET -30V Vds 20V Vgs SO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance29 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge32 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation5 W--
ConfigurationDual--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
Height1.75 mm--
Length4.9 mm--
SeriesSI4--
Transistor Type2 P-Channel--
Width3.9 mm--
BrandVishay / Siliconix--
Forward Transconductance Min23 S--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time8 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesSI4925DDY-GE3--
Unit Weight0.006596 oz--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI4925DDY-T1-GE3 MOSFET -30V Vds 20V Vgs SO-8
SI4925DDY-T1-GE3-CUT TAPE New and Original
SI4925DDY New and Original
SI4925DDY-T1-E3 New and Original
Vishay
Vishay
SI4925DDY-T1-GE3 MOSFET 2P-CH 30V 8A 8-SOIC
Top