SI5403DC-T1-GE3

SI5403DC-T1-GE3 vs SI5403DC-T1-GE3-CUT TAPE

 
PartNumberSI5403DC-T1-GE3SI5403DC-T1-GE3-CUT TAPE
DescriptionMOSFET -30V Vds 20V Vgs 1206-8 ChipFET
ManufacturerVishay-
Product CategoryMOSFET-
RoHSY-
TechnologySi-
Mounting StyleSMD/SMT-
Package / CaseChipFET-8-
Number of Channels1 Channel-
Transistor PolarityP-Channel-
Vds Drain Source Breakdown Voltage30 V-
Id Continuous Drain Current6 A-
Rds On Drain Source Resistance30 mOhms-
Vgs th Gate Source Threshold Voltage1 V-
Vgs Gate Source Voltage10 V-
Qg Gate Charge28 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation6.3 W-
ConfigurationSingle-
Channel ModeEnhancement-
TradenameTrenchFET-
PackagingReel-
Height1.1 mm-
Length3.05 mm-
SeriesSI54-
Transistor Type1 P-Channel-
Width1.65 mm-
BrandVishay / Siliconix-
Forward Transconductance Min18 S-
Fall Time12 ns-
Product TypeMOSFET-
Rise Time11 ns-
Factory Pack Quantity3000-
SubcategoryMOSFETs-
Typical Turn Off Delay Time37 ns-
Typical Turn On Delay Time11 ns-
Part # AliasesSI5403DC-GE3-
Unit Weight0.002998 oz-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI5403DC-T1-GE3 MOSFET -30V Vds 20V Vgs 1206-8 ChipFET
SI5403DC-T1-GE3-CUT TAPE New and Original
Vishay
Vishay
SI5403DC-T1-GE3 MOSFET P-CH 30V 6A 1206-8
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