SI5403DC

SI5403DC-T1-GE3 vs SI5403DC-T1-GE3-CUT TAPE vs SI5403DC

 
PartNumberSI5403DC-T1-GE3SI5403DC-T1-GE3-CUT TAPESI5403DC
DescriptionMOSFET -30V Vds 20V Vgs 1206-8 ChipFET
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseChipFET-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current6 A--
Rds On Drain Source Resistance30 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge28 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation6.3 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
Height1.1 mm--
Length3.05 mm--
SeriesSI54--
Transistor Type1 P-Channel--
Width1.65 mm--
BrandVishay / Siliconix--
Forward Transconductance Min18 S--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time11 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time37 ns--
Typical Turn On Delay Time11 ns--
Part # AliasesSI5403DC-GE3--
Unit Weight0.002998 oz--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI5403DC-T1-GE3 MOSFET -30V Vds 20V Vgs 1206-8 ChipFET
SI5403DC-T1-GE3-CUT TAPE New and Original
SI5403DC New and Original
SI5403DCD-T1-GE3 New and Original
Vishay
Vishay
SI5403DC-T1-GE3 MOSFET P-CH 30V 6A 1206-8
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