SI7137DP-T

SI7137DP-T1-GE3 vs SI7137DP-T1 vs SI7137DP-T1-E3

 
PartNumberSI7137DP-T1-GE3SI7137DP-T1SI7137DP-T1-E3
DescriptionMOSFET -20V Vds 12V Vgs PowerPAK SO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current60 A--
Rds On Drain Source Resistance1.6 mOhms--
Vgs th Gate Source Threshold Voltage1.4 V--
Vgs Gate Source Voltage12 V--
Qg Gate Charge585 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation104 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
SeriesSI7--
Transistor Type1 P-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min95 S--
Fall Time72 ns--
Product TypeMOSFET--
Rise Time14 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time230 ns--
Typical Turn On Delay Time20 ns--
Part # AliasesSI7137DP-GE3--
Unit Weight0.017870 oz--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI7137DP-T1-GE3 MOSFET -20V Vds 12V Vgs PowerPAK SO-8
SI7137DP-T1 New and Original
SI7137DP-T1-E3 New and Original
SI7137DP-TI-GE3 New and Original
Vishay
Vishay
SI7137DP-T1-GE3 MOSFET P-CH 20V 60A PPAK SO-8
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