SI7434

SI7434ADP-T1-RE3 vs SI7434DP-T1-E3 vs SI7434DP-T1-GE3

 
PartNumberSI7434ADP-T1-RE3SI7434DP-T1-E3SI7434DP-T1-GE3
DescriptionMOSFET 250V Vds 20V Vgs PowerPAK SO-8MOSFET 250V Vds 20V Vgs PowerPAK SO-8MOSFET 250V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYEY
TechnologySiSiSi
Mounting StyleSMD/SMT-SMD/SMT
Package / CasePowerPAK-SO-8-PowerPAK-SO-8
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current3.7 A--
Rds On Drain Source Resistance150 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge16.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation54.3 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePowerPAKTrenchFETTrenchFET
PackagingReelReelReel
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min10 S--
Fall Time22 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time22 ns--
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time18 ns--
Typical Turn On Delay Time8 ns--
Series-SI7SI7
Part # Aliases-SI7434DP-E3SI7434DP-GE3
Unit Weight-0.017870 oz0.017870 oz
Height--1.04 mm
Length--6.15 mm
Width--5.15 mm
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI7434ADP-T1-RE3 MOSFET 250V Vds 20V Vgs PowerPAK SO-8
SI7434DP-T1-E3 MOSFET 250V Vds 20V Vgs PowerPAK SO-8
SI7434DP-T1-GE3 MOSFET 250V Vds 20V Vgs PowerPAK SO-8
Vishay
Vishay
SI7434DP-T1-GE3 IGBT Transistors MOSFET 250V 3.8A 5.2W 155mohm @ 10V
SI7434ADP-T1-RE3 MOSFET N-CHAN 250V POWERPAK SO-8
SI7434DP-T1-E3 MOSFET N-CH 250V 2.3A PPAK SO-8
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