SI7439DP-T1-

SI7439DP-T1-GE3 vs SI7439DP-T1-E3 vs SI7439DP-T1

 
PartNumberSI7439DP-T1-GE3SI7439DP-T1-E3SI7439DP-T1
DescriptionMOSFET -150V Vds 20V Vgs PowerPAK SO-8MOSFET -150V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8PowerPAK-SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage150 V150 V-
Id Continuous Drain Current5.2 A5.2 A-
Rds On Drain Source Resistance90 mOhms90 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge88 nC88 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation5.4 W5.4 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height1.04 mm1.04 mm-
Length6.15 mm6.15 mm-
SeriesSI7SI7-
Transistor Type1 P-Channel1 P-Channel-
Width5.15 mm5.15 mm-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min19 S19 S-
Fall Time64 ns64 ns-
Product TypeMOSFETMOSFET-
Rise Time46 ns46 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time115 ns115 ns-
Typical Turn On Delay Time25 ns25 ns-
Part # AliasesSI7439DP-GE3SI7439DP-E3-
Unit Weight0.017870 oz0.017870 oz-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI7439DP-T1-GE3 MOSFET -150V Vds 20V Vgs PowerPAK SO-8
SI7439DP-T1-E3 MOSFET -150V Vds 20V Vgs PowerPAK SO-8
SI7439DP-T1 New and Original
Vishay
Vishay
SI7439DP-T1-E3 MOSFET P-CH 150V 3A PPAK SO-8
SI7439DP-T1-GE3 MOSFET P-CH 150V 3A PPAK SO-8
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