SI7884BDP-T

SI7884BDP-T1-GE3 vs SI7884BDP-T1-E3 vs SI7884BDP-TI-E3

 
PartNumberSI7884BDP-T1-GE3SI7884BDP-T1-E3SI7884BDP-TI-E3
DescriptionMOSFET 40V 58A 46W 7.5mohm @ 10VMOSFET N-CH 40V 58A PPAK SO-8
ManufacturerVishayVISHAY-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current58 A--
Rds On Drain Source Resistance7.5 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge51 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation46 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
Height1.04 mm--
Length6.15 mm--
SeriesSI7--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandVishay / Siliconix--
Forward Transconductance Min55 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time32 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesSI7884BDP-GE3--
Unit Weight0.017870 oz--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI7884BDP-T1-GE3 MOSFET 40V 58A 46W 7.5mohm @ 10V
Vishay
Vishay
SI7884BDP-T1-E3 MOSFET N-CH 40V 58A PPAK SO-8
SI7884BDP-T1-GE3 MOSFET N-CH 40V 58A PPAK SO-8
SI7884BDP-TI-E3 New and Original
Top